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| S DP /B 75N03L S amHop Microelectronics C orp. May,2004 ver1.1 N-Channel Logic Level E nhancement Mode Field E ffect Transistor 4 P R ODUC T S UMMAR Y V DS S 30V F E AT UR E S ( m W ) Max ID 70A R DS (on) S uper high dense cell design for extremely low R DS (ON). High power and current handling capability. TO-220 & TO-263 package. 7 @ V G S = 10V 11 @ V G S = 4.5V D D G D S G S G S DP S E R IE S TO-220 S DB S E R IE S TO-263(DD-P AK) S ABS OLUTE MAXIMUM R ATINGS (TC =25 C unless otherwise noted) P arameter Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuous -P ulsed a S ymbol VDS VGS @ TJ=125 C ID IDM IS PD TJ, TS TG Limit 30 20 70 210 75 75 -65 to 175 Unit V V A A A W C Drain-S ource Diode Forward C urrent Maximum P ower Dissipation @ Tc=25 C Operating and S torage Temperature R ange THE R MAL C HAR AC TE R IS TIC S Thermal R esistance, Junction-to-C ase Thermal R esistance, Junction-to-Ambient R JC R JA 1 2 62.5 C /W C /W S DP /B 75N03L E LE CTR ICAL CHAR ACTE R IS TICS (TC =25 C unless otherwise noted) 4 Parameter OFF CHAR ACTE R IS TICS Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage S ymbol BVDSS IDSS IGSS VGS(th) R DS (ON) ID(ON) gFS CISS COSS CRSS b Condition VGS = 0V, ID = 250uA VDS = 24V, VGS = 0V VGS = 16V, VDS = 0V VDS = VGS, ID = 250uA VGS = 10V, ID = 37A VGS = 4.5V, ID = 30A VGS = 10V, VDS = 10V VDS = 10V, ID = 37A Min Typ Max Unit 30 35 10 100 V uA nA V m ohm ON CHAR ACTE R IS TICS a Gate Threshold Voltage Drain-S ource On-S tate R esistance On-S tate Drain Current Forward Transconductance 1 1.5 6 9 60 47 1900 960 320 VDD = 15V, ID =1A, VGEN = 10V R G =1.8 ohm R L =0.20 ohm VDS=24V,ID =75A,VGS=10V VDS=24V,ID =75A,VGS=4.5V VDS =24V, ID = 75A, VGS =10V 2 3 7 11 m ohm A S PF PF PF DYNAMIC CHAR ACTE R IS TICS b Input Capacitance Output Capacitance R everse Transfer Capacitance VDS =15V, VGS = 0V f =1.0MHZ S WITCHING CHAR ACTE R IS TICS Turn-On Delay Time R ise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-S ource Charge Gate-Drain Charge tD(ON) tr tD(OFF) tf Qg Qgs Qgd 15 12.5 5.5 6.5 61 32 11 11 ns ns ns ns nC nC nC nC S DP /B 75N03L E LE CTR ICAL CHAR ACTE R IS TICS (TC=25 C unless otherwise noted) Parameter Diode Forward Voltage S ymbol VSD Condition VGS = 0V, Is =37A Min Typ Max Unit 0.93 1.3 V 4 DR AIN-S OUR CE DIODE CHAR ACTE R IS TICS a Notes a.Pulse Test:Pulse Width 300us, Duty Cycle 2%. b.Guaranteed by design, not subject to production testing. 40 35 V G S =10,9,8,7,6,5,4V 20 25 25 C ID, Drain C urrent(A) 25 20 15 10 5 0 0 1 2 3 4 5 6 V G S =3V ID, Drain C urrent (A) 30 15 10 -55 C 5 T J =125 C 0 0 1 2 3 4 5 6 V DS , Drain-to-S ource Voltage (V ) V G S , G ate-to-S ource Voltage (V ) F igure 1. Output C haracteris tics 6000 F igure 2. Trans fer C haracteris tics 2.2 V G S =10V ID=37A R DS (ON), Normalized Drain-S ource On-R es is tance 5000 1.8 1.4 1.0 0.6 0.2 0 C , C apacitance (pF ) 4000 3000 2000 1000 0 0 5 10 15 20 25 30 C is s C os s C rs s -50 -25 0 25 50 75 100 125 T j( C ) V DS , Drain-to S ource Voltage (V ) F igure 3. C apacitance F igure 4. On-R es is tance Variation with Temperature 3 S DP /B 75N03L B V DS S , Normalized Drain-S ource B reakdown V oltage V th, Normalized G ate-S ource T hres hold V oltage 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 V DS =V G S ID=250uA 1.15 ID=250uA 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 4 T j, J unction T emperature ( C ) T j, J unction T emperature ( C ) F igure 5. G ate T hres hold V ariation with T emperature 50 F igure 6. B reakdown V oltage V ariation with T emperature 50 gFS , T rans conductance (S ) Is , S ource-drain current (A) 40 30 20 10 V DS =10V 0 0 10 20 30 40 10 1 0.1 0.4 0.6 0.8 1.0 1.2 1.4 IDS , Drain-S ource C urrent (A) V S D, B ody Diode F orward V oltage (V ) F igure 7. T rans conductance V ariation with Drain C urrent 10 V G S , G ate to S ource V oltage (V ) F igure 8. B ody Diode F orward V oltage V ariation with S ource C urrent 300 200 ID, Drain C urrent (A) 8 6 4 2 0 0 VDS =10V ID=75A 100 RD S( ) ON L im it 10 10 1m ms s s 0m 10 DC 1s 1 0.5 0.1 V G S =20V S ingle P ulse T c=25 C 1 10 30 60 8 16 24 32 40 48 56 64 Qg, T otal G ate C harge (nC ) V DS , Drain-S ource V oltage (V ) F igure 9. G ate C harge 4 F igure 10. Maximum S afe O perating Area S DP /B 75N03L V DD ton V IN D VG S R GE N G 90% 4 toff tr 90% RL V OUT td(on) V OUT td(off) 90% 10% tf 10% INVE R TE D S V IN 50% 10% 50% P ULS E WIDTH F igure 11. S witching T es t C ircuit F igure 12. S witching Waveforms 2 r(t),Normalized E ffective T ransient T hermal Impedance 1 D=0.5 0.2 0.1 0.1 0.05 0.02 0.01 S ingle P uls e 0.01 0.01 1. 2. 3. 4. 1 10 100 P DM t1 t2 R cJ C (t)=r (t) * R cJ C R cJ C =S ee Datas heet T J M-T C = P * R cJ C (t) Duty C ycle, D=t1/t2 1000 10000 0.1 S quare Wave P uls e Duration (ms ec) F igure 13. Normalized T hermal T rans ient Impedance C urve 5 S DP /B 75N03L 6 |
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